TBPDPS-PFBS CAS#: 258872-05-8; 凯望编码 (ChemWhat Code): 1499782
Identification
| 英文名 | TBPDPS-PFBS |
| IUPAC名称 | (4-tert-butylphenyl)-diphenylsulfanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate |
| 分子结构 | ![]() |
| CAS Registry Number | 258872-05-8 |
| EINECS Number | No data available |
| MDL Number | No data available |
| Beilstein Registry Number | No data available |
| Synonyms | Di-p-tolyl iodonium salt: perfluorobutyl sulphonate (1:1) Diphenyl 4-tertbutylphenylsulfonium nonafluorobutanesulfonate (4-tert-butylphenyl)-diphenylsulfanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate (4-(tert-Butyl)phenyl)diphenylsulfonium 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Diphenyl 4-tert-butylphenylsulfonium nonafluorobutanesulfonate Sulfonium, [4-(1,1-Dimethylethyl)Phenyl]Diphenyl-,1,1,2,2,3,3,4,4,4-Nonafluoro-1-Butanesulfonate (1:1) |
| Molecular Formula | C26H23F9O3S2 |
| Molecular Weight | 618.6 |
| InChI | InChI=1S/C22H23S.C4HF9O3S/c1-22(2,3)18-14-16-21(17-15-18)23(19-10-6-4-7-11-19)20-12-8-5-9-13-20;5-1(6,3(9,10)11)2(7,8)4(12,13)17(14,15)16/h4-17H,1-3H3;(H,14,15,16)/q+1;/p-1 |
| InChI Key | GXZZZWUTJCPYHC-UHFFFAOYSA-M |
| Canonical SMILES | CC(C)(C)C1=CC=C(C=C1)S+C3=CC=CC=C3.C(C(C(F)(F)S(=O)(=O)[O-])(F)F)(C(F)(F)F)(F)F |
| Patent Information | ||
| No data available |
Physical Data
| Appearance | White to off-white powder |
| Solubility | No data available |
| Flash Point | No data available |
| Refractive index | No data available |
| Sensitivity | No data available |
Spectra
| No data available |
Route of Synthesis (ROS)
| No data available |
Safety and Hazards
| GHS Hazard Statements | Not Classified |
Other Data
| Transportation | NONH for all modes of transport |
| Under the room temperature and away from light | |
| HS Code | No data available |
| Storage | Under the room temperature and away from light |
| Shelf Life | 2 years |
| Market Price | USD |
| Druglikeness | |
| No data available |
| Use Pattern |
| used as a photoacid generator (PAG) in chemically amplified photoresist systems for advanced semiconductor lithography. |
| Upon exposure to UV or deep ultraviolet (DUV) light, it generates strong acids that initiate catalytic deprotection reactions in photoresist materials, enabling high-resolution pattern formation. |
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