TETRAKIS(ETHYLMETHYLAMINO)HAFNIUM CAS#: 352535-01-4; 凯望编码 (ChemWhat Code): 33468
Identification
| 英文名 | TETRAKIS(ETHYLMETHYLAMINO)HAFNIUM |
| IUPAC Name | ethyl(methyl)azanide;hafnium(4+) |
| 分子结构 |  |
| CAS编号 | 352535-01-4 |
| MDL Number | MFCD03427130 |
| 别名 | 352535-01-4 Tetrakis(ethylmethylamino)hafnium Ethanamine, N-methyl-, hafnium(4+) salt (4:1) ethyl(methyl)azanide;hafnium(4+) MFCD03427130 SCHEMBL237323 Hafnium tetrakis(ethylmethylamide) Tetrakis(ethylmethylamido)hafnium(IV) Tetrakis(ethylmethylamino)hafnium 99.999% Tetrakis(ethylmethylamido)hafnium(IV), >=99.99% trace metals basis Tetrakis(ethylmethylamido)hafnium(IV), packaged for use in deposition systems |
| 分子式 | C12H32HfN4 |
| 分子量 | 410.9 |
| InChI | InChI=1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4 |
| InChI Key | NPEOKFBCHNGLJD-UHFFFAOYSA-N |
| Isomeric SMILES | CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C.[Hf+4] |
Physical Data
| Appearance | Colorless liquid |
Spectra
No data available
Route of Synthesis (ROS)
| Conditions | Yield |
| In water-d2 grown by ALD on p-type (100) Si substrate; |
Safety and Hazards
| Pictogram(s) |  |
| Signal | Danger |
| GHS Hazard Statements | H225 (100%): Highly Flammable liquid and vapor [Danger Flammable liquids] H261 (75.78%): In contact with water releases flammable gas [Danger Substances and mixtures which in contact with water, emit flammable gases] H302 (17.19%): Harmful if swallowed [Warning Acute toxicity, oral] H311 (17.19%): Toxic in contact with skin [Danger Acute toxicity, dermal] H314 (25%): Causes severe skin burns and eye damage [Danger Skin corrosion/irritation] H315 (75%): Causes skin irritation [Warning Skin corrosion/irritation] H319 (75%): Causes serious eye irritation [Warning Serious eye damage/eye irritation] H331 (17.19%): Toxic if inhaled [Danger Acute toxicity, inhalation] H335 (100%): May cause respiratory irritation [Warning Specific target organ toxicity, single exposure; Respiratory tract irritation] |
| Precautionary Statement Codes | P210, P231+P232, P233, P240, P241, P242, P243, P260, P261, P262, P264, P264+P265, P270, P271, P280, P301+P317, P301+P330+P331, P302+P352, P302+P361+P354, P303+P361+P353, P304+P340, P305+P351+P338, P305+P354+P338, P316, P319, P321, P330, P332+P317, P337+P317, P361+P364, P362+P364, P363, P370+P378, P402+P404, P403+P233, P403+P235, P405, and P501 (The corresponding statement to each P-code can be found at the GHS Classification page.) |
Other Data
| Shelf Life | 1 year |
| Druglikeness | |
| Lipinski rules component | |
| 分子量 | 414.935 |
| HBA | 4 |
| HBD | 0 |
| Matching Lipinski Rules | 3 |
| Veber rules component | |
| Polar Surface Area (PSA) | 12.96 |
| Rotatable Bond (RotB) | 8 |
| Matching Veber Rules | 2 |
| Use Pattern |
| TETRAKIS(ETHYLMETHYLAMINO)HAFNIUM CAS 352535-01-4 is a common metal-organic precursor used in thin film deposition in the semiconductor industry. It is employed for the deposition of high-quality HfO2 (hafnium oxide) thin films, which are crucial in manufacturing high-dielectric constant materials and Metal-Insulator-Semiconductor Field-Effect Transistors (MISFETs). |
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